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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr
Preliminary Data Sheet
IXFH 70N15 IXFT 70N15
VDSS ID25
RDS(on)
= 150 V
= 70 A = 28 mΩ
trr ≤ 250ns
Symbol
V DSS
VDGR V
GS
V GSM
ID25
IDM I
AR
EAR EAS
dv/dt
P D
TJ T
JM
T stg
TL Md Weight
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
2
Ω
T C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
70
A
280
A
70
A
30
mJ
1.0
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
IXFH70N15 Datasheet
