Overview: .. PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated
Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = ≤ 200 74 34 200 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns TO-247 (IXFH) G D S D (TAB) PLUS220 (IXFV) G W °C °C °C °C °C D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting Force Mounting torque TO-247 PLUS220 (PLUS220) (TO-247) 300 250 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 6.0 4.
