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IXFK21N100F - Power MOSFET

Features

  • z RF Capable MOSFETs z Double Metal Process for Low Gate Resistive z Avalanche Rated z Fast Intrinsic Rectifier Advantages z High Power Density z Easy to Mount z Space Savings.

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Datasheet preview – IXFK21N100F

Datasheet Details

Part number IXFK21N100F
Manufacturer IXYS Corporation
File Size 95.50 KB
Description Power MOSFET
Datasheet download datasheet IXFK21N100F Datasheet
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HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr IXFK21N100F IXFX21N100F VDSS = ID25 = RDS(on) ≤ 1000V 21A 500mΩ trr ≤ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 1000 V 1000 V ± 20 V ± 30 V 21 A 84 A 21 A 2.5 J 10 V/ns 500 W -55 ... +150 °C 150 °C -55 ...
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