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IXFK21N100Q - HiPerFET Power MOSFET

This page provides the datasheet information for the IXFK21N100Q, a member of the IXFX21N100Q HiPerFET Power MOSFET family.

Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Rated for unclamped Inductive load switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification.

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Datasheet preview – IXFK21N100Q

Datasheet Details

Part number IXFK21N100Q
Manufacturer IXYS
File Size 623.20 KB
Description HiPerFET Power MOSFET
Datasheet download datasheet IXFK21N100Q Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFK 21N100Q IXFX 21N100Q VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
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