Overview: HiPerFETTM Power MOSFETs
Single MOSFET Die Avalanche Rated
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 34N80 IXFX 34N80 VDSS ID25
RDS(on) = 800 V = 34 A = 0.24 W trr £ 250 ns Maximum Ratings 800 800 ±20 ±30 34 136 36 64 3 5 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 0.9/6 Nm/lb.in.
