Datasheet Summary
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK100N10 IXFN150N10
ID25
RDS(on) 12 mW 12 mW
100 V 100 A 100 V 150 A trr £ 200 ns
TO-264 AA (IXFK)
Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100 76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 150 -55 ... +150 V V V V A A A A mJ V/ns...