Datasheet Summary
..TM HiPerFET Power MOSFETs
VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07
ID25
RDS(on) 6 mW 7 mW 6 mW
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06
Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ......