Datasheet4U Logo Datasheet4U.com

IXFK102N30P - Polar MOSFETs

Key Features

  • z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK100N65X2 Power MOSFET IXYS
IXFK120N20 Power MOSFET IXYS
IXFK120N25 HiPerFET Power MOSFETs IXYS
IXFK120N25P Power MOSFET IXYS
IXFK120N30T GigaMOS Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK100N10 Power MOSFET
IXFK100N25 Power MOSFET
IXFK105N07 HiPerFET Power MOSFETs
IXFK110N06 HiPerFET Power MOSFETs
IXFK110N07 HiPerFET Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102 A 33 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ...