IXFK110N06 Datasheet | IXYS

..TM Hi Per FET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 m W 7 m W 6 m W N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ... +150 150 -55 ... +150 V V V V V V A A A A m J J V/ns W °C °C °C °C Nm/lb.in. Nm/lb.in. g TO-264 AA (IXFK) (TAB) Features - International standard packages - JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - Fast intrinsic Rectifier Applications - - - - DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies - DC choppers - Temperature and lighting controls - Low voltage relays Advantages - Easy to mount - Space savings - High power density 92802I (10/97) 1.6 mm (0.063 in) from case for 10 s Mounting torque Terminal connection torque 300 0.9/6...