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IXFK40N90P - Power MOSFET

Download the IXFK40N90P datasheet PDF. This datasheet also covers the IXFX40N90P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 900 V 3.5 6.5 V ±200 nA 50 μA 3.5 mA 230 mΩ z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX40N90P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK40N90P IXFX40N90P VDSS ID25 RDS(on) trr = 900V = 40A < 230mΩ < 300ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 900 V 900 V ±30 V ±40 V 40 A 80 A 20 A 2.5 J 15 960 -55 to +150 150 -55 to +150 300 260 1.13/10 20..120 /4.5..27 10 6 V/ns W °C °C °C °C °C Nm/lb.in. N/lb.