Overview: HiPerFETTM Power MOSFETs
Single MOSFET Die IXFX 44N60 IXFK 44N60 VDSS ID25
RDS(on) = 600 V = 44 A = 130 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 600 600 ±20 ±30 44 176 44 60 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.
