IXFK44N60 Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
IXFK44N60 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier
- ID25 Note 1