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IXFK52N30Q - Power MOSFET

Key Features

  • Low gate charge.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on).

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Full PDF Text Transcription for IXFK52N30Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFK52N30Q. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Sym...

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h dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) trr = 300 V = 52 A = 60 m W £ 250 ns Maximum Ratings 300 300 ±20 ±30 52 208 52 30 1.5 5 360 -55 ... +150 150 -55 ...

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