Datasheet4U Logo Datasheet4U.com

IXFK90N20Q - Power MOSFET

Key Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Rated for unclamped Inductive load switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK90N60X Power MOSFET IXYS
IXFK90N60X N-Channel MOSFET INCHANGE
IXFK100N65X2 Power MOSFET IXYS
IXFK120N20 Power MOSFET IXYS
IXFK120N25 HiPerFET Power MOSFETs IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK90N20 HiPerFET Power MOSFETs
IXFK90N30 Power MOSFET
IXFK94N50P2 Power MOSFET
IXFK100N10 Power MOSFET
IXFK100N25 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Q-CLASS IXFX 90N20Q IXFK 90N20Q Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t rr V = DSS ID25 = = RDS(on) 200 V 90 A 22 mΩ trr ≤ 200 µs PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Symbol V DSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 200 V 200 V ±20 V ±30 V 90 A 360 A 90 A 60 mJ 2.5 J 5 V/ns 500 W -55 ...