Overview: HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr IXFN 130N30
D G V = 300 V DSS
ID25 = 130 A = RDS(on) 22 mΩ trr < 250 ns Symbol
VDSS VDGR VGS VGSM ID25 IL(RMS) I
DM
I
AR
EAR EAS dv/dt
P D
TJ TJM Tstg VISOL
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω T C = 25°C 50/60 Hz, RMS t = 1 min I
ISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque S S Maximum Ratings 300 V 300 V ±20 V ±30 V 130 A 100 A 520 A 100 A 85 mJ 4 J 5 V/ns 700 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
