IXFN130N30 Description
+150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source.
IXFN130N30 Key Features
- Internationalstandardpackages
- miniBLOC, with Aluminium nitride
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- FastintrinsicRectifier
- ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %