IXFN27N80 Description
+150 2500 3000 V V V V A A A A A A mJ V/ns W °C °C °C °C V~.
IXFN27N80 Key Features
- 55 ... +150
- VDSS VGS = 0 V VGS = 10 V, ID = 0.5
- ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
- Part: IXFN27N80
- Manufacturer: IXYS
- Size: 296.83 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFN27N80Q | Power MOSFET |
| IXFN20N120 | HiPerFET Power MOSFETs |
| IXFN20N120P | Polar Power MOSFET HiPerFET |
| IXFN230N10 | Power MOSFET |
| IXFN23N100 | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET |