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HiPerFETTM Power MOSFETs Q-Class
Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
IXFN 27N80Q VDSS ID25
RDS(on)
D
= 800 V = 27 A = 320 mΩ
G S
S
Maximum Ratings 800 800 ± 20 ± 30 27 108 27 60 2.5 5 520 -55 ... +150 150 -55 ...
IXFN27N80Q Datasheet
