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Advance Technical Information
Polar3TM HiPerFETTM Power MOSFET
IXFN80N60P3
VDSS ID25
RDS(on) trr
N-Channel Enhancement Mode Fast Intrinsic Rectifier
= = ≤ ≤
600V 66A 70mΩ 250ns
miniBLOC E153432
S G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ±30 ±40 66 200 40 2 35 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g
z z z
S D
G = Gate S = Source
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
IXFN80N60P3 Datasheet
