IXFN80N60P3 Datasheet Polar3 HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN80N60P3 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A 70mΩ 250ns miniBLOC E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 66 200 40 2 35 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g z z z S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.

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Datasheet Details

Part number	IXFN80N60P3
Manufacturer	IXYS (now Littelfuse)
File Size	136.22 KB
Description	Polar3 HiPerFET Power MOSFET
Download	IXFN80N60P3 Download (PDF)

Key Features

International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance z z z z z z z 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque 2500 3000 1.5/13 1.3/11.5 30 Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherw.

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