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IXFR44N50P - Power MOSFET

Features

  • l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force 300 2500 20..120 / 4.5..25 5 l l l Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise spe.

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C Maximum Ratings 500 500 ±40 ±30 24 132 44 55 1.7 10 208 -55 ... +150 150 -55 ...
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