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IXFR44N50Q - Power MOSFET

Features

  • l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(.

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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q 34 40 176 192 44 48 60 2.5 5 310 -55 ... +150 150 -55 ...
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