IXFT120N15P Description
Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr .. Symbol VDSS VDGR VGS VGSM ID25 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C;.
IXFT120N15P Key Features
- easy to drive and to protect Fast intrinsic diode
- Gate 3
- Source 2
- Drain Tab