IXFT120N15P
IXFT120N15P is Polar MOSFETs manufactured by IXYS.
Advanced Technical Information
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 120N15P IXFT 120N15P
VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr
..
Symbol VDSS VDGR VGS VGSM ID25
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.5 10 600 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ J V/ns W °C °C °C °C
TO-247AD (IXFH)
D (TAB) S
ID(RMS) IDM...
