IXFT13N80Q Description
HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800 V 13 A 0.70 W trr £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM.
IXFT13N80Q Key Features
- IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated
- Fast switching
- Molding epoxies meet UL 94 V-0 flammability classification
- Easy to mount
- Space savings
- High power density