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IXFT21N50F Datasheet HiPerRF Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

Download the IXFT21N50F datasheet PDF. This datasheet also includes the IXFH21N50F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFH21N50F_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 21N50F VDSS IXFT 21N50F ID25 RDS(on) = 500 V = 21A = 250mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 500 500 ± 20 ± 30 21 84 21 35 1.5 10 300 -55 ...

+150 150 -55 ...

+150 300 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.13/10 Nm/lb.in.

Key Features

  • l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Logo IXFT21N50Q Power MOSFET IXYS

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