IXFT21N50F Datasheet | IXYS

Advance Technical Information Hi Per RFTM Power MOSFETs F-Class: Mega Hertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High d V/dt, Low trr IXFH 21N50F VDSS IXFT 21N50F ID25 RDS(on) = 500 V = 21A = 250mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 500 500 ± 20 ± 30 21 84 21 35 1.5 10 300 -55 ... +150 150 -55 ... +150 300 V V V V A A A m J J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.13/10 Nm/lb.in. 6 4 g g Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500k Hz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V ±100 n A TJ = 125°C 50 µA 1.5 m A 250 m Ω VDSS VGS = 0 V, ID = 1m A VGS(th) VDS = VGS, ID = 4m A .. VGS = ±20 V, VDS = 0 IGSS IDSS RDS(on) VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved 98884 (1/02) IXFH 21N50F IXFT 21N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 12 17 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 470 160 16 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.0 Ω (External) 12 36 7.7...