IXFT21N50Q Description
6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA 500 2.5 VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ =.
IXFT21N50Q is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXFT21N50F | HiPerRF Power MOSFETs |
6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA 500 2.5 VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ =.