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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
Preliminary Data Sheet
IXFH 23N60Q IXFT 23N60Q
VDSS ID25
RDS(on)
= = =
600 V 23 A 0.32 Ω
trr ≤ 250ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 23 92 23 30 1.5 15 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G G = Gate S = Source S D = Drain TAB = Drain
(TAB)
1.6 mm (0.
IXFT23N60Q Datasheet
