Click to expand full text
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
IXFH20N100P IXFT20N100P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 20A 570mΩ 300ns
Maximum Ratings 1000 1000 ± 30 ± 40 20 50 10 800 15 660 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g
TO-247 (IXFH)
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate S = Source
D = Drain TAB = Drain
Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268
300 260 1.
IXFT20N100P Datasheet
