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Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on)
= 500V = 28A = 190mΩ
trr ≤ 250 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings
(TAB)
500 500 ± 20 ± 30 28 112 28 35 1.5 10 315 -55 ... +150 150 -55 ...
IXFT28N50F Datasheet
