Download the IXFT30N50Q3 datasheet PDF.
This datasheet also covers the IXFH30N50Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
300 260 1.13 / 10 4.0 6.0
Advantages
z z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 5.
Full PDF Text Transcription for IXFT30N50Q3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFT30N50Q3. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT30N50Q3 IXFH30...
View more extracted text
ement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT30N50Q3 IXFH30N50Q3 VDSS ID25 RDS(on) = 500V = 30A ≤ 200mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 30 90 30 1.5 50 690 -55 ... +150 150 -55 ...
IXFT30N50Q3 Datasheet
