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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25
RDS(on) trr
= = ≤ ≤
600 V 18 A 400 mΩ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 600 600 ±30 ±40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C
TO-247 AD (IXFH)
D (TAB)
PLUS220 (IXFV)
G D S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.
IXFV18N60P Datasheet
