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IXFV18N60PS - PolarHV HiPerFET Power MOSFET

Download the IXFV18N60PS datasheet PDF. This datasheet also covers the IXFV18N60P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l l nA μA μA mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99390E(03/06) © 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 9 16 2500.

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Note: The manufacturer provides a single datasheet file (IXFV18N60P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFV18N60PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFV18N60PS. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on)...

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Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = ≤ ≤ 600 V 18 A 400 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 AD (IXFH) D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV...

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