IXFX220N17T2
IXFX220N17T2 is GigaMOS TrenchT2 HiperFET Power MOSFET manufactured by IXYS.
- Part of the IXFK220N17T2 comparator family.
- Part of the IXFK220N17T2 comparator family.
Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK220N17T2 IXFX220N17T2
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 220A 6.3mΩ 140ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 220 160 550 110 2 1250 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C...
