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IXFX30N50Q - Power MOSFET

Download the IXFX30N50Q datasheet PDF. This datasheet also covers the IXFK30N50Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z PLUS 247TM package for clip or spring mounting z Space savings z High power density © 2002 IXYS All rights reserved 98604D (06/02) IXFK 30N50Q IXFK 32N50Q IXFX 30N50Q IXFX 32N50Q Symbol Test Conditions Characteristic Values.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK30N50Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 30 A 500 V 32 A RDS(on) 0.16 Ω 0.15 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 500 V 500 V ±20 V ±30 V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 30N50Q 30 A 32N50Q 32 A 30N50Q 120 A 32N50Q 128 A 32 A 45 mJ 1500 mJ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque 5 V/ns 416 -55 ... + 150 150 -55 ... + 150 300 1.