IXFX100N25
IXFX100N25 is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs
Single MOSFET Die
IXFX 100N25 IXFK 100N25
VDSS ID25
RDS(on)
= 250 V = 100 A = 27 mΩ trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C
Maximum Ratings 250 250 ± 20 ± 30 100 75 400 100 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A m J J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
(TAB) D
TO-264 AA (IXFK)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
0.9/6 Nm/lb.in. 6 10 g g
Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance
- easy to drive and to protect l Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 V 4.0 V ±200 n A TJ = 25°C TJ = 125°C 100 µA 2 m A 27 mΩ
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls
Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l
© 2001 IXYS All rights reserved
98613B (5/01)
IXFK 100N25 IXFX...
