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IXFX20N120 - HiPerFET Power MOSFETs

Download the IXFX20N120 datasheet PDF. This datasheet also covers the IXFK20N120 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK20N120_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX20N120P Power MOSFET
IXFX21N100F Power MOSFET
IXFX220N15P Polar Power MOSFET HiperFET
IXFX220N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFX25N90 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D D (TAB) S TO-264 AA (IXFK) G D S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.