IXFX20N120P Datasheet | IXYS

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings  30  40 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C -55 ... +150 150 -55 ... +150 V/ns C C C Maximum Lead Temperature for Soldering °C 1.6 mm (0.062in.) from Case for 10s °C Mounting Torque (TO-264) Mounting Force...