IXFX20N120P Description
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to.
IXFX20N120P Key Features
- Fast Intrinsic Diode
- Dynamic dv/dt Rating
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings