Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM ID25 IDM IA
EAS
dV/dt
PD TJ TJM Tstg
TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 900 V 900 V ± 20 V ± 30 V 25N90 25 A 25N90 100 A 26N90 26 A 26N90 104 A 25N90 25 A 26N90 26 A 3 J 5 V/ns 560
-55 ... +150 150
-55 ... +150
300 260
1.13/10
20..120 /4.5..27
10 6 W
°C °C °C
°C °C
Nm/lb.in.
N/lb.
g g Symbol
BVDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max. VGS = 0V, ID = 3mA 900 V VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = 0.8 • VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 3.0
25N90 26N90 5.
