Datasheet4U Logo Datasheet4U.com

IXFX180N10 - Power MOSFETs

Download the IXFX180N10 datasheet PDF. This datasheet also covers the IXFK180N10 variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK180N10_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX180N07 Power MOSFET IXYS
IXFX180N25T GigaMOS Power MOSFET IXYS
IXFX180N25T GigaMOS Power MOSFET IXYS
IXFX100N65X2 Power MOSFET IXYS
IXFX120N20 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX100N25 Power MOSFET
IXFX150N15 Power MOSFET
IXFX20N120 HiPerFET Power MOSFETs
IXFX20N120P Power MOSFET
IXFX21N100F Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 180N10 IXFX 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mW trr £ 250 ns Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in.