IXFX180N10 Datasheet | IXYS

.. Hi Per FETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 180N10 IXFX 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 m W trr £ 250 ns Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A m J J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) D (TAB) D TO-264 AA (IXFK) (TAB) G = Gate S = Source D = Drain TAB = Drain Features - International standard packages - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect - Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 V 4.0 V ±100 n A TJ = 25°C TJ = 125°C 100 m A 2 m A 8 m W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 - ID25 Note...