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HiPerFETTM Power MOSFETs
Single Die MOSFET
IXFX 50N50 IXFX 55N50
VDSS
ID25
500 V 50 A
500 V 55 A
t rr
≤
250
ns
RDS(on)
100 mΩ 80 mΩ
Preliminary data sheet
Symbol
V DSS
VDGR V
GS
VGSM ID25
IDM
IAR
EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque
50N50 55N50 50N50 55N50 50N50 55N50
500 V 500 V
±20 V ±30 V
50 A 55 A 200 A 220 A 50 A 55 A
60 mJ
3J
5 V/ns
520 W
-55 ... +150
150 -55 ... +150
°C
°C °C
300 °C
1.13/10 Nm/lb.in.
IXFX55N50 Datasheet
