Datasheet4U Logo Datasheet4U.com

IXFZ520N075T2 - TrenchT2 GigaMOS HiperFET Power MOSFET

Features

  • z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 2500 20..120 / 4.5..27 3 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very L.

📥 Download Datasheet

Datasheet preview – IXFZ520N075T2

Datasheet Details

Part number IXFZ520N075T2
Manufacturer IXYS (now Littelfuse)
File Size 219.98 KB
Description TrenchT2 GigaMOS HiperFET Power MOSFET
Datasheet download datasheet IXFZ520N075T2 Datasheet
Additional preview pages of the IXFZ520N075T2 datasheet.

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL TL TSOLD VISOL FC Weight www.DataSheet4U.net IXFZ520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 465A 1.3mΩ DE475 D D D Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ±20 ±30 465 1560 200 3 600 -55 ... +175 175 -55 ... +175 V V V V A A A J W °C °C °C V~ V~ °C °C V~ N/lb. g G S S Isolated Tab G = Gate S = Source D = Drain Features z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 2500 20..120 / 4.
Published: |