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IXGA16N60C2 - High-Speed IGBT

Key Features

  • z z C E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Mounting torque (M3.5 screw) 0.55/5 Nm/lb. in. 300 260 4 2 °C °C g g Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263 z Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 40 A = 3.0 V = 35 ns D1 Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXG_16N60C2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 40 16 11 100 ICM = 32 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A A G G C TO-263 (IXGA) C (TAB) TO-220 (IXGP) W °C °C °C Features z z C E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Mounting torque (M3.