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IXGA20N120B3 - GenX3 1200V IGBT

Key Features

  • z Maximum Lead Temperature for Soldering 1.6mm (0.062 in. ) from Case for 10s TO-263 TO-220 z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 ±100 TJ = 125°C 2.7 2.8 3.1 V V μA mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information GenX3TM 1200V IGBT IXGA20N120B3 IXGP20N120B3 VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 15Ω Clamped Inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 36 20 80 ICM = 40 @VCE ≤ 1200 180 -55 ... +150 150 -55 ... +150 V V V V A A A A V W °C °C °C Nm/lb.in. N/lb. °C °C g g G E C (TAB) TO-220 (IXGP) G C (TAB) C E G = Gate E = Emitter C = Collector TAB = Collector Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..