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IXGA24N120C3 - GenX3 1200V IGBT

Key Features

  • Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C 3.6 3.1 Characteristic Values Min. Typ. Max. 1200 2.5 5.0 100 1.5 ±100 4.2 TJ = 125°C V V μA mA nA V V z z z VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 20A, VGE = 15V, Note 2 International standard packages: JEDEC TO-247AD MOS Gate turn-on - drive simplicity Avalanche rated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA) 1200V 48A 4.2V 110ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 1200V TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 48 24 96 20 250 ICM = 48 250 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ A W °C °C °C Nm/lb.in. °C °C g g g G C E G C C (TAB) E G E C (TAB) TO-247 (IXGH) TO-220 (IXGP) Mounting torque Maximum lead temperature for soldering 1.