Datasheet Summary
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode bi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)
1000 V 24 A 3.5 V 1000 V 24 A 4.0 V
Symbol
Test Conditions
VCES VCGR
VGES VGEM
C25
C90
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW
Continuous Transient
= 25°C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH
TC = 25°C
TJ TJM Tstg
Md Weight
Mounting torque with screw M3
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
±20
±30
ICM = 24
@ 0.8 VCES
-55 ......