IXGH28N60B Description
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol .. VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A W °C °C °C Nm/lb.in.
IXGH28N60B Key Features
- International standard packages
- Low VCE(sat)
- for minimum on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM