IXGH28N60B
IXGH28N60B is Ultra-low V Ce(sat) Igbt manufactured by IXYS.
- Part of the IXGT28N60B comparator family.
- Part of the IXGT28N60B comparator family.
Ultra-Low VCE(sat) IGBT with Diode
IXGH 28N60B IXGT 28N60B
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data
Symbol .. VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 m H TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. °C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector
Mounting torque (M3) TO-247
1.13/10 300 6 4
Features
- International standard packages
- Low VCE(sat)
- for minimum on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM Applications
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- -
- AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 100 500 ±100 2.0 V V m A m A n A V
BVCES VGE(th) ICES IGES...
