Download the IXGH28N60B datasheet PDF.
This datasheet also covers the IXGT28N60B variant, as both devices belong to the same ultra-low v ce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.
Key Features
International standard packages.
Low VCE(sat) - for minimum on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.
Full PDF Text Transcription for IXGH28N60B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXGH28N60B. For precise diagrams, and layout, please refer to the original PDF.
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 ...
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Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.