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IXGH28N60A3 - Ultra Low Vsat PT IGBT

This page provides the datasheet information for the IXGH28N60A3, a member of the IXGA28N60A3 Ultra Low Vsat PT IGBT family.

Features

  • Optimized for Low Conduction Losses.
  • Square RBSOA.
  • International Standard Packages Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

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Datasheet preview – IXGH28N60A3

Datasheet Details

Part number IXGH28N60A3
Manufacturer IXYS
File Size 266.67 KB
Description Ultra Low Vsat PT IGBT
Datasheet download datasheet IXGH28N60A3 Datasheet
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Full PDF Text Transcription

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat PT IGBT for up to 5kHz Switching TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load TC = 25°C 75 A 28 A 170 A ICM = 48 A  @VCE VCES 190 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) 10..65 / 2.2.
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