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IXGH24N120C3H1 - High speed PT IGBT

Key Features

  • International standard packages: JEDEC TO-247AD IGBT and anti-parallel FRD in one package MOS Gate turn-on - drive simplicity Sonic-FRD diode - soft recovery with low IRM Avalanche rated.

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH24N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 48A 4.2V 110ns Symbol VCES V CGR V GES V GEM I C25 IC100 ICM IA E AS SSOA (RBSOA) PC TJ TJM Tstg Md TL T SOLD Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1MΩ Continuous Transient T C = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C T = 25°C C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 1200V TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 48 A 24 A 96 A 20 A 250 mJ ICM = 48 A 250 -55 ... +150 150 -55 ... +150 1.13/10 300 260 6 W °C °C °C Nm/lb.in.