IXGH32N60B Description
HiPerFASTTM IGBT IXGH32N60B VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.5 V 80 ns .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 V V V V A A A A W °C °C °C °C TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXGH32N60B Key Features
- International standard package JEDEC TO-247 AD
- High current handling capability
- Newest generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity