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HiPerFASTTM IGBT with Diode
IXGH 32N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 2.3 V = 80 ns
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Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W °C °C °C °C Nm/lb.in. g
TO-247 AD
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.
IXGH32N60BU1 Datasheet
