IXGH32N60BU1 Description
HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 1.13/10 6 V V V V A A A A W °C °C °C °C Nm/lb.in.
IXGH32N60BU1 Key Features
- drive simplicity