Download the IXGH42N30C3 datasheet PDF.
This datasheet also covers the IXGA42N30C3 variant, as both devices belong to the same genx3 300v igbt family and are provided as variant models within a single manufacturer datasheet.
Key Features
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Optimized for low switching losses Square RBSOA High current handling capability International standard packages
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 ±100 1.54 1.54 1.85 TJ = 125°C V V μA μA nA V V
Advantages
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High power density Low gate drive requirement
VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 42A, VGE = 1.
Full PDF Text Transcription for IXGH42N30C3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXGH42N30C3. For precise diagrams, and layout, please refer to the original PDF.
GenX3TM 300V IGBT IXGA42N30C3 High Speed PT IGBTs for 50-150kHz switching IXGH42N30C3 IXGP42N30C3 VCES IC110 VCE(sat) tfi typ = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Sy...
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ES IC110 VCE(sat) tfi typ = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum Ratings 300 300 ±20 ±30 42 250 42 250 ICM = 84 223 -55 ... +150 150 -55 ... +150 V V V V A A A mJ A W °C °C °C °C °C Nm/lb.in. g g g G C C (TAB) E C = Collector TAB = Collector G C E C (TAB) G E C (TAB) TO-247 (IXGH) T
IXGH42N30C3 Datasheet
