Overview: w w w . D a t a S h e e t 4 U . n e t HiPerFASTTM IGBT with Fast Diode IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 B2-Class High Speed IGBT with Fast Diode
Preliminary Data Sheet
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md FC Weight Mounting torque (TO-247, TO-264) Mounting force (PLUS247) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 75 50 200 ICM = 100 400 -55 ... +150 150 -55 ... +150 300 V V V V A A A A VCES IC25 VCE(sat) tfi typ = 900 V = 75 A = 2.7 V = 200 ns TO-247 (IXGH) C (TAB) G C E PLUS247 (IXGX) C (TAB) W °C °C °C °C
G D G C E TO-264 (IXGK) 1.13/10Nm/lb.in. 20..120 / 4.5..25 TO-247 TO-264 PLUS247 6 10 6 N/lb g g g S C (TAB) C = Collector TAB = Collector G = Gate E = Emitter Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) ICES IGES VCE(sat) IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IC110, VGE = 15 V, Note 1 TJ = 125°C TJ = 150°C Characteristic Values min. typ. max. 3.0 5.0 50 1 ± 100 2.2 2.
