Datasheet4U Logo Datasheet4U.com

IXGH72N60A3 - GenX3 600V IGBT

Features

  • z z z Optimized for low conduction losses Square RBSOA International standard packages Advantages z z High power density Low gate drive requirement.

📥 Download Datasheet

Datasheet preview – IXGH72N60A3
Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH72N60A3 IXGT72N60A3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-247 (IXGH) V V V V A A A A G TO-268 (IXGT) G C E 600V 72A 1.35V 250ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 72 400 ICM = 150 540 -55 ... +150 150 -55 ... +150 C (TAB) W °C °C °C °C °C Nm/lb.in. g g E C (TAB) C = Collector TAB = Collector G = Gate E = Emitter 1.6mm (0.062 in.
Published: |