IXGH72N60A3
IXGH72N60A3 is GenX3 600V IGBT manufactured by IXYS.
.Data Sheet.co.kr
Gen X3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5k Hz switching
IXGH72N60A3 IXGT72N60A3
VCES = IC110 = VCE(sat) ≤ tfi(typ) =
TO-247 (IXGH) V V V V A A A A G TO-268 (IXGT) G C E
600V 72A 1.35V 250ns
Symbol
VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ ≤ 600V TC = 25°C
Maximum Ratings
600 600 ± 20 ± 30 75 72 400 ICM = 150 540 -55 ... +150 150 -55 ... +150
C (TAB)
W °C °C °C °C °C Nm/lb.in. g g
C (TAB) C = Collector TAB = Collector
G = Gate E = Emitter
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268
300 260 1.13/10 6 4
Features z z z
Optimized for low conduction losses Square RBSOA International standard packages
Advantages z z
High power density Low gate drive requirement
Applications
Symbol Test Conditions (TJ = 25°C unless otherwise specified)
BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 60A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max.
600 3.0 5.0 75 750 ±100 1.35 V V μA μA n A V z z z z z z z z z
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